| IPB80N06S2L07ATMA3 | |
|---|---|
| Zenbakiaren zenbakia | IPB80N06S2L07ATMA3 |
| fabrikatzailea | Infineon Technologies |
| deskribapena | MOSFET N-CH 55V 80A TO263-3 |
| Kopurua eskuragarri | 2565 pcs new original in stock. Eskatu Stock & Quotation |
| ECAD eredua | |
| Fitxak | 1.IPB80N06S2L07ATMA3.pdf2.IPB80N06S2L07ATMA3.pdf3.IPB80N06S2L07ATMA3.pdf |
| IPB80N06S2L07ATMA3 Price |
Eska ezazu Prezioa eta Lead Time Online or Email us: Info@ariat-tech.com |
| IPB80N06S2L07ATMA3 informazio teknikoa | |||
|---|---|---|---|
| Fabrikatzailearen zatia zenbakia | IPB80N06S2L07ATMA3 | Kategoria | |
| fabrikatzailea | Cypress Semiconductor (Infineon Technologies) | deskribapena | MOSFET N-CH 55V 80A TO263-3 |
| Pakete / kasua | PG-TO263-3-2 | Kopurua eskuragarri | 2565 pcs |
| Vgs (th) (Max) @ Id | 2V @ 150µA | Vgs (Max) | ±20V |
| Teknologia | MOSFET (Metal Oxide) | Hornitzaileen gailuen paketea | PG-TO263-3-2 |
| Series | OptiMOS™ | Rds On (Max) @ Id, Vgs | 6.7mOhm @ 60A, 10V |
| Power Dissipation (Max) | 210W (Tc) | Pakete / kasua | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Pakete | Tape & Reel (TR) | Tenperatura operatiboa | -55°C ~ 175°C (TJ) |
| Muntaketa mota | Surface Mount | Sarrera edukiera (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | FET mota | N-Channel |
| FET Feature | - | Drive tentsioa (Max Rds On, Min Rds On) | 4.5V, 10V |
| Iturria tentsioa xukatu (Vdss) | 55 V | Uneko - Drain kontinentala (Id) @ 25 ° C | 80A (Tc) |
| Oinarrizko produktuaren zenbakia | IPB80N | ||
| Deskarga | IPB80N06S2L07ATMA3 PDF - EN.pdf | ||
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| IPB80N06S2L07ATMA3 irudia | IPB80N06S2L07ATMA3 Irudia | IPB80N06S2L07ATMA3 PDF |
| IPB80N06S2L07ATMA3 Fitxa-orria | Deskargatu IPB80N06S2L07ATMA3 Fitxa | Cypress Semiconductor (Infineon Technologies) fabrikatzailea |
